Internationally, South Korea’s Samsung Electronics and SK hynix have been pursuing the 4F² technology.
SK hynix unveiled its 4F² road map in 2025, while Samsung planned to mass-produce sub-10-nanometre DRAM based on the new design by 2028, according to a report published by Seoul Economic Daily on October 13.
CXMT said it was the first company to complete engineering sample validation of the architecture, and if development continues smoothly, it could become the first company globally to bring 4F²-based products to market.
Hm. This says their 17nm DDR5 yields have surpassed 90%. HBM3E yields appears to be low. Are you talking abt HBM yields?
4F2 targets 10nm DRAM which doesn’t require ASML’s most advanced stuff - EUV, AFAIK. It’s done with DUV which China has plenty of and they also got some domestic machines coming out this year. I see info that Micron has pivoted away from 4F2 but SK and Samsung are actively developing it for their next processes. Do you have anything that shows otherwise? If they’re still developing it, why would they do it if 4F2 is worse than 6F2?
The article is about 6th generation. You’re quoting stats for 5th generation.