Reballed memory currently accounts for a small share of smartphone components, but adoption could nearly double by 2027 as manufacturers look for alternatives to increasingly expensive DRAM.
Both can fail. Failing NAND flash (solid state storage) usually results in reallocated sectors or slower reading due to retrying reads on bad sectors. Slow read/write can also just be a symptom of a nearly full drive. Failing DDR# memory can cause software freezes, crashes, or other random behaviour because usually there’s no error correction at that level (ECC isn’t common for consumer devices). Lots of detectable errors (through ECC) can cause a slowdown as it needs to redo the read/write.
If you ignore error correction, storage doesn’t get slower either.
But I also forgot one scenario: the voltage required to get a certain memory frequency increases as the chip ages. At some point you’ll have to lower the frequency to use the chips with a safe voltage, which is literally a slow down.
Both can fail. Failing NAND flash (solid state storage) usually results in reallocated sectors or slower reading due to retrying reads on bad sectors. Slow read/write can also just be a symptom of a nearly full drive. Failing DDR# memory can cause software freezes, crashes, or other random behaviour because usually there’s no error correction at that level (ECC isn’t common for consumer devices). Lots of detectable errors (through ECC) can cause a slowdown as it needs to redo the read/write.
Yeah, but failing RAM don’t get slower or lose capacity. It just plain crashes, right?
If you ignore error correction, storage doesn’t get slower either.
But I also forgot one scenario: the voltage required to get a certain memory frequency increases as the chip ages. At some point you’ll have to lower the frequency to use the chips with a safe voltage, which is literally a slow down.
Yes, unless you consider retraining
¯\_(ツ)_/¯